To overcome this challenge, the researchers combine spin-on glass technology – a mainstay of the semi conducting industry – with photolithographic definition of electrical contacts to the top and bottom of nanowires. “These processes will provide the necessary control to enable integrated nanowire photonic circuits in a standard manufacturing setting,”.
What allows the researchers to follow this approach is the geometry of their devices. Instead of contacting axially nanowires at each end, the researchers employ a sandwich geometry where the nanowires are placed horizontally between a highly conductive substrate, which acts as one contact, and a top metallic layer, which acts as the other. What prevents the device from shorting is a spin-on glass spacer layer. The spinning process results in uneven coverage of the film – which is thinner on top of the nanowires. After controlled etching, the nanowires can be exposed without revealing the underlying substrate. Photolithography can then be used to define a pattern of metallic contacts.
“One can make electrical contacts to a large number of nanowires… simultaneously using mainstream integrated circuit processing methods,” Heterojunction diodes comprising n-type ZnO nanowires on a ρ-type Si substrate showed good rectification properties and can also function as ultraviolet light emitters. “Such an advance could lead to the development of a completely new class of integrated circuits, such as large arrays of ultrasmall nanoscale lasers that could be designed as high-density optical interconnects or used for on-chip sensing,” .
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